Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs
نویسندگان
چکیده
منابع مشابه
Low-frequency electronic noise in single-layer MoS2 transistors.
Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2020
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2020.2978215